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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU86 UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * SMD encapsulation * Emitter-ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications band. PINNING - SOT223 PIN 1 2 3 4 DESCRIPTION emitter base emitter collector
1
Top view
MBB012
BLU86
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION f (MHz) 900 VCE (V) 12.5 PL (W) 1 Gp (dB) >7 c (%) > 55
halfpage
4
c
handbook, halfpage
b
e
2
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
September 1991
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value; f > 1 MHz f > 1 MHz; Ts = 129 C (note 1) - - - - - - MIN.
BLU86
MAX. 32 16 3 200 600 2
UNIT V V V mA mA W
Tstg Tj Note
storage temperature range operating junction temperature
-65 -
150 175
C C
1. Ts = temperature at soldering point of collector tab.
103 handbook, halfpage IC (mA)
MRA241
Ts = 129 oC 102
10 1 10 VCE (V)
102
Fig.2 DC SOAR.
THERMAL RESISTANCE SYMBOL Rth j-s(DC) PARAMETER from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 129 C 23 MAX. K/W UNIT
September 1991
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE ESBR PARAMETER collector-base breakdown voltage collector-emitter breadown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain second breakdown energy CONDITIONS open emitter; IC = 2.5 mA open base; IC = 10 mA open collector; IE = 0.5 mA VBE = 0; VCE = 16 V VCE = 10 V; IC = 150 mA L = 25 mH; RBE = 10 ; f = 50 Hz VCB = 12.5 V; IE = Ie = 0; f = 1 MHz VCE = 12.5 V; IC = 0; f = 1 MHz MIN. 32 16 3 - 25 0.3 TYP. - - - - - -
BLU86
MAX. UNIT - - - 1 - - mJ V V V mA
CC
collector capacitance
-
2.2
2.6
pF
Cre
feedback capacitance
-
1.2
1.8
pF
MRA237
100 handbook, halfpage hFE 80 10 V 60 VCE = 12.5 V
MRA234
5 handbook, halfpage Cc (pF) 4
3
40
2
20
1
0 0 200 400 IC (mA) 600
0
0
5
10
VCB (V)
15
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C; in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. 900 f (MHz) 12.5 VCE (V) 1 PL (W) Gp (dB) >7 typ. 7.7
BLU86
c (%) > 55 typ. 66
MRA235
MRA240
handbook, 10 halfpage
100 GP
GP (dB) 8
c (%)
80
2 handbook, halfpage PL (W) 1.5
6
c
60 1
4
40 0.5
2
20
0 0
0.4
0.8
1.2 PL (W)
0 1.6
0
0
100
200
300
400 500 PIN (mW)
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Fig.5
Gain and efficiency as functions of load power, typical values.
Fig.6
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLU86 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, f = 900 MHz and Ts 60 C, where Ts is the temperature at the soldering point of the collector tab.
September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLU86
handbook, full pagewidth
50 input
C1
,,,,
L1 L2 C2 L5 R1 L6
TUT
C3
,,,,
L3 L4 L7 C4 L8 C7 R2 C8
C6
50 output
C5
+VCC C9
MBC090
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit) COMPONENT C1, C6 C2, C3, C4, C5 C7 C8 C9 L1 L2 L3 L4 L5, L7 L6, L8 R1, R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (r = 2.2); thickness 116 inch. DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 63 V electrolytic capacitor stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) 6 turns enamelled 0.8 mm copper wire grade 3B1 Ferroxcube wideband HF choke 0.25 W metal film resistor 10 , 5% VALUE 100 pF 1.4 to 5.5 pF 220 pF 1 nF 2.2 F 50 50 50 50 17 mm x 4.7 mm 5 mm x 4.7 mm 32 mm x 4.7 mm 20 mm x 4.7 mm int. dia. 3 mm 4312 020 36640 2222 809 09001 DIMENSIONS CATALOGUE NO.
September 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLU86
handbook, full pagewidth
140 mm
strap
strap
80 mm
rivets (14x) strap mounting screws (8x) strap
VCC L8 L6 C7 R2 R1 L5 C1 C2 L1 L2 C3 L3 C4 L7 L4 C5 C6 C8 C9
MBC089
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.8 Component layout for 900 MHz class-B test circuit.
September 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLU86
handbook, halfpage Z
14
MRA238
MRA239
handbook, 50 halfpage
i () 12 10 8 6 4
ZL ()
40 ri 30 xi
RL
XL
20
10 2 0 800 0 800
840
880
920
960 1000 f (MHz)
840
880
920
960 1000 f (MHz)
Class-B operation; VCE = 12.5 V; PL = 1 W.
Class-B operation; VCE = 12.5 V; PL = 1 W.
Fig.9
Input impedance (series components) as a function of frequency, typical values.
Fig.10 Load impedance (series components) as a function of frequency, typical values.
handbook, halfpage
12 GP (dB) 10
MRA236
8
6
handbook, halfpage
4 Zi ZL
MBA451
2
0 800
840
880
920
960
1000 f MHz
Class-B operation; VCE = 12.5 V; PL = 1 W.
Fig.11 Definition of transistor impedance.
Fig.12 Power gain as a function of frequency, typical values.
September 1991
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BLU86
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
September 1991
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU86
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991
10

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